Magnetic Czochralski Silicon for Power Devices
نویسندگان
چکیده
منابع مشابه
Intentional thermal donor activation in magnetic Czochralski silicon
We have made a quantitative study about the thermal activation of thermal donors in high resistivity magnetic Czochralski silicon. The thermal donor activation has been performed through a thermal treatment at 430 1C up to a total time of 80min. The space charge density after each annealing step has been extracted from capacitance–voltage measurements. If the starting material is boron-doped p-...
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Modeling of heat transfer is presented for the entire Czochralski Si-growth furnace. The axisymmetric steady-state approach with moving computational grids is used. Melt turbulent flow, inert gas flow, heat transfer in solid parts, and radiative heat transfer in the system are considered. The Reynolds-averaged Navier-Stokes equations written with the Boussinesq approximation and the energy equa...
متن کاملCharge Collection and Capacitance-Voltage analysis in irradiated n-type magnetic Czochralski silicon detectors
The depletion depth of irradiated n-type silicon microstrip detectors can be inferred from both the reciprocal capacitance and from the amount of collected charge. Capacitance-voltage (C-V) measurements at different frequencies and temperatures are being compared with the bias voltage dependence of the charge collection on an irradiated n-type magnetic Czochralski silicon detector. Good agreeme...
متن کاملCharge collection measurements with p-type Magnetic Czochralski Silicon single pad detectors
The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1MeV neutron equivalent fluence of 1x10 cm the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measure...
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We have processed pin-diodes and strip detectors on nand p-type high-resistivity silicon wafers grown by magnetic Czochralski method. The Czochralski silicon (Cz-Si) wafers manufactured by Okmetic Oyj have nominal resistivity of 900O cm and 1.9 kO cm for nand p-type, respectively. The oxygen concentration in these substrates is slightly less than typically in wafers used for integrated circuit ...
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ژورنال
عنوان ژورنال: ECS Proceedings Volumes
سال: 1987
ISSN: 0161-6374,2576-1579
DOI: 10.1149/198713.0343pv